Infineon Full Bridge IGBT, 75 A 1200 V AG-EASY2B-711, Chassis
- RS Stock No.:
- 258-0905
- Mfr. Part No.:
- FS75R12W2T7B11BOMA1
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tray of 15 units)*
$958.005
(exc. GST)
$1,053.81
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Temporarily out of stock
- Shipping from 25 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
|---|---|---|
| 15 - 15 | $63.867 | $958.01 |
| 30 - 30 | $57.48 | $862.20 |
| 45 + | $51.731 | $775.97 |
*price indicative
- RS Stock No.:
- 258-0905
- Mfr. Part No.:
- FS75R12W2T7B11BOMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 20mW | |
| Package Type | AG-EASY2B-711 | |
| Configuration | Full Bridge | |
| Mount Type | Chassis | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.77V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 20mW | ||
Package Type AG-EASY2B-711 | ||
Configuration Full Bridge | ||
Mount Type Chassis | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.77V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon EasyPACK 2B 1200 V, 75 A six-pack IGBT module with TRENCHSTOP IGBT7, emitter controlled 7 diode, NTC and PressFIT contact technology.
Al2O3 substrate with low thermal resistance
High power density
Compact design
PressFIT contact technology
Related links
- Infineon FS75R12W2T7B11BOMA1 IGBT, 65 A 1200 V AG-EASY2B-711
- Infineon 3 Phase IGBT Chassis
- Infineon FP35R12W2T7BPSA1 3 Phase IGBT Chassis
- Infineon FP50R12W2T7B11BOMA1 IGBT, 50 A 1200 V AG-EASY2B
- Infineon FP35R12W2T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY2B
- Infineon FP35R12W2T4BOMA1 3 Phase Bridge IGBT Module Panel Mount
- Infineon F4 Quad SiC N-Channel MOSFET Module 1200 V AG-EASY2B F411MR12W2M1B76BOMA1
- Infineon FF300R08W2P2B11ABOMA1 Half Bridge IGBT Module PCB Mount