Infineon IKW75N65SS5XKSA1 IGBT Module, 75 A 650 V PG-TO-247
- RS Stock No.:
- 249-6948
- Mfr. Part No.:
- IKW75N65SS5XKSA1
- Brand:
- Infineon
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Subtotal (1 unit)*
$16.64
(exc. GST)
$18.30
(inc. GST)
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- Plus 163 unit(s) shipping from 12 March 2026
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Units | Per unit |
|---|---|
| 1 - 4 | $16.64 |
| 5 - 9 | $14.98 |
| 10 - 14 | $13.49 |
| 15 - 19 | $12.14 |
| 20 + | $10.92 |
*price indicative
- RS Stock No.:
- 249-6948
- Mfr. Part No.:
- IKW75N65SS5XKSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 395W | |
| Package Type | PG-TO-247 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.35V | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC | |
| Length | 41.9mm | |
| Width | 16.3 mm | |
| Height | 5.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 395W | ||
Package Type PG-TO-247 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.35V | ||
Maximum Gate Emitter Voltage VGEO ±20 ±30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC | ||
Length 41.9mm | ||
Width 16.3 mm | ||
Height 5.3mm | ||
Automotive Standard No | ||
The Infineon TRENCHSTOP 5S5 IGBT co-packed with full-rated 6th generation cool SiCTMS schottky barrier diode. Ultra-low switching losses due to the combination of TRENCHSTOPTM5 and CoolSiCTM technology. Benchmark efficiency in hard switching topologies. Plug-and-play replacement of pure silicon devices. Maximum junction temperature is 175°C
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