Infineon IKW40N65RH5XKSA1 Single IGBT Transistor Module, 40 A 650 V PG-TO247-3

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Subtotal (1 tube of 30 units)*

$207.57

(exc. GST)

$228.33

(inc. GST)

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Units
Per unit
Per Tube*
30 - 30$6.919$207.57
60 - 60$6.227$186.81
90 +$5.604$168.12

*price indicative

RS Stock No.:
249-6938
Mfr. Part No.:
IKW40N65RH5XKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

15V

Maximum Power Dissipation

250 W

Number of Transistors

2

Package Type

PG-TO247-3

Configuration

Single

The Infineon schottky barrier diode has ultra low switching losses due to the combination of TRENCHSTOPTM5 and CoolSiCTM technology. Benchmark efficiency in hard switching topologies. Plug-and-play replacement of pure silicon devices. Maximum junction temperature is 175°C.

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