Infineon IGBT Module, 75 A 1200 V
- RS Stock No.:
- 244-5834
- Mfr. Part No.:
- FP50R12KE3BOSA1
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tray of 10 units)*
$1,568.49
(exc. GST)
$1,725.34
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Temporarily out of stock
- Shipping from 25 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
|---|---|---|
| 10 - 10 | $156.849 | $1,568.49 |
| 20 - 20 | $153.711 | $1,537.11 |
| 30 + | $150.636 | $1,506.36 |
*price indicative
- RS Stock No.:
- 244-5834
- Mfr. Part No.:
- FP50R12KE3BOSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 75A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 280W | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Series | FP50R12KE3 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 75A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 280W | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Series FP50R12KE3 | ||
Automotive Standard No | ||
The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 280 W, maximum gate threshold voltage is 6.5 V.
Internal isolation basic insulation (class 1, IEC 61140)
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 2.30 V
Gate-emitter leakage current 400 nA
Related links
- Infineon FP50R12KE3BOSA1 IGBT Module, 75 A 1200 V
- Infineon FP50R12KT3BOSA1 IGBT Module Panel Mount
- Infineon FP75R12KT4BOSA1 IGBT Module, 75 A 1200 V EconoPIM
- Infineon FP75R12KT4PBPSA1 IGBT Module, 75 A 1200 V EASY2B
- Infineon FP75R12KT4B11BOSA1 IGBT Module, 75 A 1200 V
- Infineon F3L150R12W2H3B11BPSA1 IGBT Module Panel Mount
- Infineon FF75R12RT4HOSA1 75 A 1200 V Clamp
- Starpower GD75FFY120C5S IGBT Module 28-Pin Module