MPN

Infineon FP50R12KE3BOSA1 IGBT Module, 75 A 1200 V

RS Stock No.:: 244-5834
Mfr. Part No.:: FP50R12KE3BOSA1
Brand:: Infineon

Infineon FP50R12KE3BOSA1 IGBT Module, 75 A 1200 V

Bulk discount available

Subtotal (1 tray of 10 units)*

$1,670.15

(exc. GST)

$1,837.16

(inc. GST)

FREE delivery for orders over $60.00 ex GST

Temporarily out of stock

Shipping from 20 April 2026

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Units	Per unit	Per Tray*
10 - 10	$167.015	$1,670.15
20 - 20	$163.674	$1,636.74
30 +	$160.40	$1,604.00

*price indicative

RS Stock No.:: 244-5834
Mfr. Part No.:: FP50R12KE3BOSA1
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current	75 A
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	280 W
	Number of Transistors	7

	Select all
	Brand Infineon
	Maximum Continuous Collector Current 75 A
	Maximum Collector Emitter Voltage 1200 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 280 W
	Number of Transistors 7

Datasheet - FP50R12KE3BOSA1

The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 280 W, maximum gate threshold voltage is 6.5 V.

Internal isolation basic insulation (class 1, IEC 61140)
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 2.30 V
Gate-emitter leakage current 400 nA

Infineon FP50R12KE3BOSA1 IGBT Module, 75 A 1200 V

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