Infineon FP50R12KE3BOSA1 IGBT Module, 75 A 1200 V
- RS Stock No.:
- 244-5835
- Mfr. Part No.:
- FP50R12KE3BOSA1
- Brand:
- Infineon
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Subtotal (1 unit)*
$190.34
(exc. GST)
$209.37
(inc. GST)
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Units | Per unit |
|---|---|
| 1 - 1 | $190.34 |
| 2 - 2 | $186.54 |
| 3 - 3 | $182.80 |
| 4 - 4 | $179.13 |
| 5 + | $175.54 |
*price indicative
- RS Stock No.:
- 244-5835
- Mfr. Part No.:
- FP50R12KE3BOSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 280W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Series | FP50R12KE3 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 280W | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Series FP50R12KE3 | ||
Automotive Standard No | ||
The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 280 W, maximum gate threshold voltage is 6.5 V.
Internal isolation basic insulation (class 1, IEC 61140)
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 2.30 V
Gate-emitter leakage current 400 nA
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