onsemi IGBT 650 V, 4-Pin TO-247-4LD, Surface
- RS Stock No.:
- 241-0737
- Mfr. Part No.:
- FGHL75T65MQDTL4
- Brand:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 450 units)*
$2,761.20
(exc. GST)
$3,037.50
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 450 - 450 | $6.136 | $2,761.20 |
| 900 - 900 | $5.988 | $2,694.60 |
| 1350 + | $5.845 | $2,630.25 |
*price indicative
- RS Stock No.:
- 241-0737
- Mfr. Part No.:
- FGHL75T65MQDTL4
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 375W | |
| Package Type | TO-247-4LD | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.82mm | |
| Width | 20.82mm | |
| Series | FGHL75T65MQDTL4 | |
| Length | 15.87mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 375W | ||
Package Type TO-247-4LD | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.82mm | ||
Width 20.82mm | ||
Series FGHL75T65MQDTL4 | ||
Length 15.87mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ON Semiconductor 650 V, 75 A FS4 medium switching speed IGBT. This offer the optimum performance by balancing Vce(sat) and Eoff losses and well controllable turnoff Vce overshoot. Well suited for solar inverter, UPS, EV charging stations, ESS and other high performance power conversion applications.
Positive temperature co-efficient
Easy paralleling operation
Low switching losses
Low conduction losses
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