onsemi, Type N-Channel IGBT-Field Stop II, 80 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

$179.64

(exc. GST)

$197.61

(inc. GST)

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Units
Per unit
Per Tube*
30 - 30$5.988$179.64
60 - 90$5.837$175.11
120 +$5.748$172.44

*price indicative

RS Stock No.:
145-3469
Mfr. Part No.:
NGTB40N65FL2WG
Brand:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current Ic

80A

Product Type

IGBT-Field Stop II

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

366W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Width

16.25 mm

Length

21.34mm

Height

5.3mm

Series

Field Stop

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN

IGBT Discretes, ON Semiconductor


Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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