onsemi NCV51752CDDR2G MOSFET Gate Driver 1, 9 A 8-Pin 20 V, SOIC-8 NB
- RS Stock No.:
- 220-559
- Mfr. Part No.:
- NCV51752CDDR2G
- Brand:
- onsemi
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$12.71
(exc. GST)
$13.98
(inc. GST)
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- 2,500 unit(s) shipping from 16 December 2026
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Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 18 | $6.355 | $12.71 |
| 20 - 198 | $5.72 | $11.44 |
| 200 - 998 | $5.28 | $10.56 |
| 1000 - 1998 | $4.895 | $9.79 |
| 2000 + | $4.395 | $8.79 |
*price indicative
- RS Stock No.:
- 220-559
- Mfr. Part No.:
- NCV51752CDDR2G
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Output Current | 9A | |
| Pin Count | 8 | |
| Package Type | SOIC-8 NB | |
| Fall Time | 8.3ns | |
| Driver Type | MOSFET | |
| Rise Time | 22ns | |
| Minimum Supply Voltage | 3V | |
| Number of Drivers | 1 | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.75mm | |
| Standards/Approvals | AEC-Q100, SGS FIMO IEC 62386-1 (Planned), UL1577 (Planned), CQC GB4943.1-2011 (Planned) | |
| Length | 5mm | |
| Series | NCV51752 | |
| Mount Type | Surface | |
| Automotive Standard | AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Output Current 9A | ||
Pin Count 8 | ||
Package Type SOIC-8 NB | ||
Fall Time 8.3ns | ||
Driver Type MOSFET | ||
Rise Time 22ns | ||
Minimum Supply Voltage 3V | ||
Number of Drivers 1 | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.75mm | ||
Standards/Approvals AEC-Q100, SGS FIMO IEC 62386-1 (Planned), UL1577 (Planned), CQC GB4943.1-2011 (Planned) | ||
Length 5mm | ||
Series NCV51752 | ||
Mount Type Surface | ||
Automotive Standard AEC-Q100 | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Isolated single−channel gate driver with 4.5 A/9 A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs and SiC MOSFET power switches.
Minimum CMTI of 200 V/ns dV/dt
Negative 5−V Handling Capability on Input Pins
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