Infineon 64 kB Parallel FRAM 28-Pin SOIC-28
- RS Stock No.:
- 273-7375
- Mfr. Part No.:
- FM16W08-SG
- Brand:
- Infineon
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Subtotal (1 unit)*
$9.82
(exc. GST)
$10.80
(inc. GST)
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- 538 unit(s) shipping from 26 February 2026
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Units | Per unit |
|---|---|
| 1 - 4 | $9.82 |
| 5 - 9 | $9.63 |
| 10 - 99 | $8.77 |
| 100 - 249 | $7.90 |
| 250 + | $7.40 |
*price indicative
- RS Stock No.:
- 273-7375
- Mfr. Part No.:
- FM16W08-SG
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | FRAM | |
| Memory Size | 64kB | |
| Organisation | 8k x 8 bit | |
| Interface Type | Parallel | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 70ns | |
| Package Type | SOIC-28 | |
| Pin Count | 28 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 85°C | |
| Minimum Operating Temperature | -40°C | |
| Number of Words | 8K | |
| Automotive Standard | No | |
| Minimum Supply Voltage | 2.7V | |
| Maximum Supply Voltage | 5.5V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type FRAM | ||
Memory Size 64kB | ||
Organisation 8k x 8 bit | ||
Interface Type Parallel | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 70ns | ||
Package Type SOIC-28 | ||
Pin Count 28 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 85°C | ||
Minimum Operating Temperature -40°C | ||
Number of Words 8K | ||
Automotive Standard No | ||
Minimum Supply Voltage 2.7V | ||
Maximum Supply Voltage 5.5V | ||
The Infineon FRAM is a 8 K x 8 non volatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or FRAM is non volatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery backed SRAM. Fast write timing and high write endurance make the FRAM superior to other types of memory. Its operation is similar to that of other RAM devices and therefore, it can be used as a drop in replacement for a standard SRAM in a system. Minimum read and write cycle times are equal. The FRAM memory is non volatile due to its unique ferroelectric memory process.
Low power consumption
SRAM and EEPROM compatible
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
Superior for moisture and shock with vibration
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