Infineon 256 kB Parallel FRAM 28-Pin SOIC, FM1808B-SG

RS Stock No.:: 124-2981
Mfr. Part No.:: FM1808B-SG
Brand:: Infineon

Infineon 256 kB Parallel FRAM 28-Pin SOIC, FM1808B-SG

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$24.51

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$26.96

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606 unit(s) ready to ship from another location

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1 - 6	$24.51	-
7 - 13	$23.91	2%
14 +	$23.54	3%

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RS Stock No.:: 124-2981
Mfr. Part No.:: FM1808B-SG
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Memory Size	256kB
	Product Type	FRAM
	Organisation	32K x 8 bit
	Interface Type	Parallel
	Data Bus Width	8bit
	Maximum Random Access Time	70ns
	Mount Type	Surface
	Maximum Clock Frequency	1MHz
	Package Type	SOIC
	Pin Count	28
	Height	2.37mm
	Standards/Approvals	No
	Width	7.62mm
	Length	18.11mm
	Maximum Operating Temperature	85°C
	Number of Words	32k
	Automotive Standard	AEC-Q100
	Maximum Supply Voltage	5.5V
	Minimum Supply Voltage	4.5V
	Number of Bits per Word	8
	Minimum Operating Temperature	-40°C

	Select all
	Brand Infineon
	Memory Size 256kB
	Product Type FRAM
	Organisation 32K x 8 bit
	Interface Type Parallel
	Data Bus Width 8bit
	Maximum Random Access Time 70ns
	Mount Type Surface
	Maximum Clock Frequency 1MHz
	Package Type SOIC
	Pin Count 28
	Height 2.37mm
	Standards/Approvals No
	Width 7.62mm
	Length 18.11mm
	Maximum Operating Temperature 85°C
	Number of Words 32k
	Automotive Standard AEC-Q100
	Maximum Supply Voltage 5.5V
	Minimum Supply Voltage 4.5V
	Number of Bits per Word 8
	Minimum Operating Temperature -40°C

Datasheet - FM1808B-SG

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.