Nexperia PBSS4240T,215 Transistor, 2 A NPN, 40 V, 3-Pin SOT-23
- RS Stock No.:
- 518-1564
- Mfr. Part No.:
- PBSS4240T,215
- Brand:
- Nexperia
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Each (On a Reel of 3000)
$966.00
(exc. GST)
$1,062.60
(inc. GST)
- RS Stock No.:
- 518-1564
- Mfr. Part No.:
- PBSS4240T,215
- Brand:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 2A | |
| Maximum Collector Emitter Voltage Vceo | 40V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 40V | |
| Maximum Power Dissipation Pd | 480mW | |
| Minimum DC Current Gain hFE | 150 | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 230MHz | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Width | 2.5mm | |
| Series | PBSS4240T | |
| Length | 3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 2A | ||
Maximum Collector Emitter Voltage Vceo 40V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 40V | ||
Maximum Power Dissipation Pd 480mW | ||
Minimum DC Current Gain hFE 150 | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 230MHz | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Minimum Operating Temperature -65°C | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Width 2.5mm | ||
Series PBSS4240T | ||
Length 3mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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