MPN

Nexperia PBSS4240T,215 Transistor, 2 A NPN, 40 V, 3-Pin SOT-23

RS Stock No.:: 518-1564
Mfr. Part No.:: PBSS4240T,215
Brand:: Nexperia

Nexperia PBSS4240T,215 Transistor, 2 A NPN, 40 V, 3-Pin SOT-23

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Subtotal (1 pack of 10 units)*

$4.70

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$5.20

(inc. GST)

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In Stock

80 unit(s) ready to ship from another location
Plus 2,920 unit(s) shipping from 16 November 2026

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Units	Per unit	Per Pack*	Saving
10 - 10	$0.47	$4.70	-
20 - 40	$0.459	$4.59	2%
50 - 90	$0.448	$4.48	4%
100 - 190	$0.439	$4.39	6%
200 +	$0.428	$4.28	8%

*price indicative

RS Stock No.:: 518-1564
Mfr. Part No.:: PBSS4240T,215
Brand:: Nexperia

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Nexperia
	Product Type	Transistor
	Maximum DC Collector Current Idc	2A
	Maximum Collector Emitter Voltage Vceo	40V
	Package Type	SOT-23
	Mount Type	Surface
	Transistor Configuration	Single
	Maximum Collector Base Voltage VCBO	40V
	Maximum Emitter Base Voltage VEBO	5V
	Maximum Power Dissipation Pd	480mW
	Maximum Transition Frequency ft	230MHz
	Transistor Polarity	NPN
	Minimum Operating Temperature	-65°C
	Minimum DC Current Gain hFE	150
	Pin Count	3
	Maximum Operating Temperature	150°C
	Height	1.1mm
	Series	PBSS4240T
	Width	2.5mm
	Length	3mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Select all
	Brand Nexperia
	Product Type Transistor
	Maximum DC Collector Current Idc 2A
	Maximum Collector Emitter Voltage Vceo 40V
	Package Type SOT-23
	Mount Type Surface
	Transistor Configuration Single
	Maximum Collector Base Voltage VCBO 40V
	Maximum Emitter Base Voltage VEBO 5V
	Maximum Power Dissipation Pd 480mW
	Maximum Transition Frequency ft 230MHz
	Transistor Polarity NPN
	Minimum Operating Temperature -65°C
	Minimum DC Current Gain hFE 150
	Pin Count 3
	Maximum Operating Temperature 150°C
	Height 1.1mm
	Series PBSS4240T
	Width 2.5mm
	Length 3mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

COO (Country of Origin):: CN

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.