MPN

Nexperia Transistor, 1 A NPN, 30 V, 3-Pin SOT-23

RS Stock No.:: 518-1479P
Mfr. Part No.:: PBSS4130T,215
Brand:: Nexperia

Nexperia Transistor, 1 A NPN, 30 V, 3-Pin SOT-23

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Subtotal 750 units (supplied on a reel)*

$257.25

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$282.75

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Units	Per unit	Saving
750 - 1475	$0.343	-
1500 +	$0.337	$9.00

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RS Stock No.:: 518-1479P
Mfr. Part No.:: PBSS4130T,215
Brand:: Nexperia

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Nexperia
	Product Type	Transistor
	Maximum DC Collector Current Idc	1A
	Maximum Collector Emitter Voltage Vceo	30V
	Package Type	SOT-23
	Mount Type	Surface
	Transistor Configuration	Single
	Maximum Collector Base Voltage VCBO	40V
	Minimum Operating Temperature	-65°C
	Maximum Emitter Base Voltage VEBO	5V
	Transistor Polarity	NPN
	Maximum Power Dissipation Pd	480mW
	Minimum DC Current Gain hFE	300
	Maximum Transition Frequency ft	100MHz
	Pin Count	3
	Maximum Operating Temperature	150°C
	Height	1.1mm
	Standards/Approvals	RoHS
	Width	2.5mm
	Series	PBSS4130T
	Length	3mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Nexperia
	Product Type Transistor
	Maximum DC Collector Current Idc 1A
	Maximum Collector Emitter Voltage Vceo 30V
	Package Type SOT-23
	Mount Type Surface
	Transistor Configuration Single
	Maximum Collector Base Voltage VCBO 40V
	Minimum Operating Temperature -65°C
	Maximum Emitter Base Voltage VEBO 5V
	Transistor Polarity NPN
	Maximum Power Dissipation Pd 480mW
	Minimum DC Current Gain hFE 300
	Maximum Transition Frequency ft 100MHz
	Pin Count 3
	Maximum Operating Temperature 150°C
	Height 1.1mm
	Standards/Approvals RoHS
	Width 2.5mm
	Series PBSS4130T
	Length 3mm
	Automotive Standard AEC-Q101

COO (Country of Origin):: CN

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.