MPN

Nexperia PBSS4041NT,215 Transistor, 3.8 A NPN, 60 V, 3-Pin SOT-23

RS Stock No.:: 165-9750
Mfr. Part No.:: PBSS4041NT,215
Brand:: Nexperia

Nexperia PBSS4041NT,215 Transistor, 3.8 A NPN, 60 V, 3-Pin SOT-23

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$966.00

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$1,062.00

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Shipping from 17 May 2027

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Units	Per unit	Per Reel*	Saving
3000 - 12000	$0.322	$966.00	-
15000 +	$0.29	$870.00	9%

*price indicative

RS Stock No.:: 165-9750
Mfr. Part No.:: PBSS4041NT,215
Brand:: Nexperia

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Nexperia
	Product Type	Transistor
	Maximum DC Collector Current Idc	3.8A
	Maximum Collector Emitter Voltage Vceo	60V
	Package Type	SOT-23
	Mount Type	Surface
	Transistor Configuration	Single
	Maximum Collector Base Voltage VCBO	60V
	Minimum Operating Temperature	-65°C
	Minimum DC Current Gain hFE	30
	Transistor Polarity	NPN
	Maximum Power Dissipation Pd	1.1W
	Maximum Transition Frequency ft	100MHz
	Maximum Emitter Base Voltage VEBO	5V
	Maximum Operating Temperature	150°C
	Pin Count	3
	Height	1.1mm
	Series	PBSS4041NT
	Length	3mm
	Width	2.5mm
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Nexperia
	Product Type Transistor
	Maximum DC Collector Current Idc 3.8A
	Maximum Collector Emitter Voltage Vceo 60V
	Package Type SOT-23
	Mount Type Surface
	Transistor Configuration Single
	Maximum Collector Base Voltage VCBO 60V
	Minimum Operating Temperature -65°C
	Minimum DC Current Gain hFE 30
	Transistor Polarity NPN
	Maximum Power Dissipation Pd 1.1W
	Maximum Transition Frequency ft 100MHz
	Maximum Emitter Base Voltage VEBO 5V
	Maximum Operating Temperature 150°C
	Pin Count 3
	Height 1.1mm
	Series PBSS4041NT
	Length 3mm
	Width 2.5mm
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

COO (Country of Origin):: CN

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.