Toshiba HN1A01FU-GR,LF(T Transistor, -150 mA PNP, -50 V, 6-Pin SOT-363
- RS Stock No.:
- 144-5302
- Mfr. Part No.:
- HN1A01FU-GR,LF(T
- Brand:
- Toshiba
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 100 units)*
$14.10
(exc. GST)
$15.50
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- 300 unit(s) ready to ship from another location
- Plus 2,900 unit(s) shipping from 04 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 400 | $0.141 | $14.10 |
| 500 - 900 | $0.137 | $13.70 |
| 1000 - 4900 | $0.133 | $13.30 |
| 5000 - 9900 | $0.129 | $12.90 |
| 10000 + | $0.125 | $12.50 |
*price indicative
- RS Stock No.:
- 144-5302
- Mfr. Part No.:
- HN1A01FU-GR,LF(T
- Brand:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -150mA | |
| Maximum Collector Emitter Voltage Vceo | -50V | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Transistor Configuration | Dual | |
| Maximum Collector Base Voltage VCBO | -50V | |
| Maximum Transition Frequency ft | 80MHz | |
| Maximum Power Dissipation Pd | 200mW | |
| Minimum DC Current Gain hFE | 120 | |
| Maximum Emitter Base Voltage VEBO | -5V | |
| Transistor Polarity | PNP | |
| Pin Count | 6 | |
| Maximum Operating Temperature | 125°C | |
| Height | 0.95mm | |
| Standards/Approvals | No | |
| Length | 2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -150mA | ||
Maximum Collector Emitter Voltage Vceo -50V | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Transistor Configuration Dual | ||
Maximum Collector Base Voltage VCBO -50V | ||
Maximum Transition Frequency ft 80MHz | ||
Maximum Power Dissipation Pd 200mW | ||
Minimum DC Current Gain hFE 120 | ||
Maximum Emitter Base Voltage VEBO -5V | ||
Transistor Polarity PNP | ||
Pin Count 6 | ||
Maximum Operating Temperature 125°C | ||
Height 0.95mm | ||
Standards/Approvals No | ||
Length 2mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
Dual PNP/PNP Transistors, Toshiba
Bipolar Transistors, Toshiba
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