STMicroelectronics 1200 V 20 A Diode 3-Pin D2PAK STPSC20H12G2-TR
- RS Stock No.:
- 228-3058
- Mfr. Part No.:
- STPSC20H12G2-TR
- Brand:
- STMicroelectronics
This image is representative of the product range
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Subtotal (1 pack of 2 units)*
$35.79
(exc. GST)
$39.368
(inc. GST)
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- Shipping from 07 January 2027
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | $17.895 | $35.79 |
| 10 - 98 | $17.36 | $34.72 |
| 100 - 248 | $16.84 | $33.68 |
| 250 - 498 | $16.34 | $32.68 |
| 500 + | $15.855 | $31.71 |
*price indicative
- RS Stock No.:
- 228-3058
- Mfr. Part No.:
- STPSC20H12G2-TR
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 60μA | |
| Minimum Operating Temperature | -40°C | |
| Maximum Forward Voltage Vf | 2.25V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 120A | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.3mm | |
| Standards/Approvals | RoHS | |
| Length | 15.95mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Pin Count 3 | ||
Peak Reverse Current Ir 60μA | ||
Minimum Operating Temperature -40°C | ||
Maximum Forward Voltage Vf 2.25V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 120A | ||
Maximum Operating Temperature 175°C | ||
Height 4.3mm | ||
Standards/Approvals RoHS | ||
Length 15.95mm | ||
Automotive Standard No | ||
The STMicroelectronics 20 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
No or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
Operating Tj from -40 °C to 175 °C
Related links
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