Infineon 1200 V 10 A Diode SiC Schottky 3-Pin TO-247 IDW10G120C5BFKSA1

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Subtotal (1 pack of 2 units)*

$17.56

(exc. GST)

$19.32

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8$8.78$17.56
10 - 98$8.62$17.24
100 - 248$8.465$16.93
250 - 498$8.31$16.62
500 +$8.155$16.31

*price indicative

Packaging Options:
RS Stock No.:
222-4834
Mfr. Part No.:
IDW10G120C5BFKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

Diode

Mount Type

Surface

Package Type

TO-247

Maximum Continuous Forward Current If

10A

Peak Reverse Repetitive Voltage Vrrm

1200V

Series

5th Generation CoolSiCTM

Diode Configuration

Single

Rectifier Type

SiC Schottky

Pin Count

3

Maximum Forward Voltage Vf

2.3V

Peak Non-Repetitive Forward Surge Current Ifsm

140A

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

16.13mm

Height

21.1mm

Standards/Approvals

J-STD20 and JESD22

Automotive Standard

No

The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 10 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Best-in-class forward voltage (VF)

No reverse recovery charge

Mild positive temperature dependency of VF

Best-in-class surge current capability

Excellent thermal performance

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