onsemi 1700 V 35 A Schottky Diode Schottky 2-Pin TO-247 NDSH25170A
- RS Stock No.:
- 195-2483
- Mfr. Part No.:
- NDSH25170A
- Brand:
- onsemi
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View bulk pricing optionsSubtotal (1 unit)*
$28.75
(exc. GST)
$31.62
(inc. GST)
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In Stock
- Plus 4 unit(s) shipping from 01 June 2026
- Plus 195 unit(s) shipping from 08 June 2026
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Units | Per unit |
|---|---|
| 1 - 7 | $28.75 |
| 8 - 14 | $28.03 |
| 15 + | $27.62 |
*price indicative
- RS Stock No.:
- 195-2483
- Mfr. Part No.:
- NDSH25170A
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Schottky Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 35A | |
| Peak Reverse Repetitive Voltage Vrrm | 1700V | |
| Diode Configuration | Single | |
| Series | EliteSiC | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 40μA | |
| Maximum Forward Voltage Vf | 2.8V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 220A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Height | 20.82mm | |
| Length | 15.87mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Mount Type Through Hole | ||
Product Type Schottky Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 35A | ||
Peak Reverse Repetitive Voltage Vrrm 1700V | ||
Diode Configuration Single | ||
Series EliteSiC | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Reverse Current Ir 40μA | ||
Maximum Forward Voltage Vf 2.8V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 220A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Height 20.82mm | ||
Length 15.87mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L Silicon Carbide Schottky Diode 1700 V, 25 A
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Max Junction Temperature
Tj = 175°C
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Application
SMPS
Solar Inverter
UPS
Power Switching Circuits
Related links
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