onsemi 1.2 kV 77 A Diode Schottky 2-Pin TO-247

RS Stock No.:: 178-4413P
Mfr. Part No.:: FFSH50120A
Brand:: onsemi

onsemi 1.2 kV 77 A Diode Schottky 2-Pin TO-247

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Subtotal 8 units (supplied in a tube)*

$260.00

(exc. GST)

$286.00

(inc. GST)

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In Stock

264 unit(s) ready to ship from another location

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Units	Per unit
8 - 14	$32.50
15 +	$32.00

*price indicative

RS Stock No.:: 178-4413P
Mfr. Part No.:: FFSH50120A
Brand:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	Diode
	Mount Type	Through Hole
	Package Type	TO-247
	Maximum Continuous Forward Current If	77A
	Peak Reverse Repetitive Voltage Vrrm	1.2kV
	Diode Configuration	Single
	Rectifier Type	Schottky
	Pin Count	2
	Maximum Forward Voltage Vf	1.75V
	Minimum Operating Temperature	-55°C
	Peak Reverse Current Ir	400μA
	Peak Non-Repetitive Forward Surge Current Ifsm	1.7kA
	Maximum Operating Temperature	175°C
	Length	15.87mm
	Standards/Approvals	No
	Width	4.82mm
	Height	20.82mm
	Diameter	6.85mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type Diode
	Mount Type Through Hole
	Package Type TO-247
	Maximum Continuous Forward Current If 77A
	Peak Reverse Repetitive Voltage Vrrm 1.2kV
	Diode Configuration Single
	Rectifier Type Schottky
	Pin Count 2
	Maximum Forward Voltage Vf 1.75V
	Minimum Operating Temperature -55°C
	Peak Reverse Current Ir 400μA
	Peak Non-Repetitive Forward Surge Current Ifsm 1.7kA
	Maximum Operating Temperature 175°C
	Length 15.87mm
	Standards/Approvals No
	Width 4.82mm
	Height 20.82mm
	Diameter 6.85mm
	Automotive Standard No

Datasheet FFSH50120A

COO (Country of Origin):: CN

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D1, TO-247-2L Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D1, TO-247-2L

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Max Junction Temperature 175 °C

Positive Temperature Coefficient

Ease of Paralleling

No Reverse Recovery / No Forward Recovery

Applications

PFC

Industrial Power

Solar

EV Charger

UPS

Welding