Infineon 1200 V 31.9 A Diode Schottky 3-Pin TO-220
- RS Stock No.:
- 133-9915P
- Mfr. Part No.:
- IDH10G120C5XKSA1
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal 125 units (supplied in a tube)*
$1,432.50
(exc. GST)
$1,576.25
(inc. GST)
FREE delivery for orders over $80.00 ex GST
In Stock
- 275 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 125 - 249 | $11.46 |
| 250 + | $11.29 |
*price indicative
- RS Stock No.:
- 133-9915P
- Mfr. Part No.:
- IDH10G120C5XKSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 31.9A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | IDH10G120C5 | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 99A | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 320μA | |
| Maximum Forward Voltage Vf | 2.6V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.2mm | |
| Standards/Approvals | No | |
| Height | 15.95mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 31.9A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series IDH10G120C5 | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 99A | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 320μA | ||
Maximum Forward Voltage Vf 2.6V | ||
Maximum Operating Temperature 175°C | ||
Length 10.2mm | ||
Standards/Approvals No | ||
Height 15.95mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI