N-Channel MOSFET, 30 A, 710 V, 3-Pin D2PAK STMicroelectronics STB38N65M5
- RS Stock No.:
- 920-8821
- Mfr. Part No.:
- STB38N65M5
- Brand:
- STMicroelectronics
1000 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (On a Reel of 1000)
$6.543
(exc. GST)
$7.197
(inc. GST)
| Units | Per unit | Per Reel* |
| 1000 - 4000 | $6.543 | $6,543.00 |
| 5000 + | $5.889 | $5,889.00 |
| *price indicative | ||
- RS Stock No.:
- 920-8821
- Mfr. Part No.:
- STB38N65M5
- Brand:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
Product Details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, STMicroelectronics
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 710 V |
| Package Type | D2PAK (TO-263) |
| Series | MDmesh M5 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 95 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 190 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Width | 9.35mm |
| Length | 10.4mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 71 nC @ 10 V |
| Transistor Material | Si |
| Height | 4.6mm |