Infineon LogicFET N-Channel MOSFET, 10 A, 100 V, 3-Pin TO-220AB IRL520NPBF

RS Stock No.:: 919-4870
Mfr. Part No.:: IRL520NPBF
Brand:: Infineon

Infineon LogicFET N-Channel MOSFET, 10 A, 100 V, 3-Pin TO-220AB IRL520NPBF

Bulk discount available

Subtotal (1 tube of 50 units)**

$75.90

(exc. GST)

$83.50

(inc. GST)

Available for back order.*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over $60.00 ex GST

Units	Per unit	Per Tube**
50 - 200	$1.518	$75.90
250 - 950	$1.478	$73.90
1000 - 2450	$1.412	$70.60
2500 +	$1.367	$68.35

**price indicative

RS Stock No.:: 919-4870
Mfr. Part No.:: IRL520NPBF
Brand:: Infineon

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon LogicFET Series MOSFET, 10A Maximum Continuous Drain Current, 48W Maximum Power Dissipation - IRL520NPBF

This MOSFET is designed for various high-power applications. Its N-channel configuration and enhancement mode capability make it suitable for switching and amplification tasks in automation and electrical sectors. With a maximum continuous drain current of 10 A and a maximum drain-source voltage of 100V, it provides consistent performance in demanding environments. The TO-220AB package type facilitates effective thermal management in different mounting situations.

Features & Benefits

• High power dissipation capacity of 48W for robust performance
• Low drain-source resistance of 180mΩ enhances efficiency
• Wide operating temperature range from -55°C to +175°C ensures reliability
• Suitable for through-hole mounting, facilitating easy integration
• Enhanced gate threshold voltage between 1V and 2V optimises control
• Single transistor configuration simplifies design and assembly

Applications

• Utilised in power supply circuits for efficient voltage regulation
• Employed in motor control systems due to its high current capacity
• Applicable in industrial automation for effective switching operations
• Integrated into power management solutions for energy-efficient designs

What type of cooling method is recommended for optimal performance?

Effective heatsinking is essential to maintain operational efficiency and prevent overheating, especially under high load conditions.

Can it be directly replaced with other MOSFETs?

While direct replacements might be possible, it is crucial to consider specifications such as current and voltage ratings, as well as gate drive requirements, to ensure compatibility and functionality.

What is the recommended maximum gate-source voltage?

The maximum gate-source voltage should not exceed -16V to +16V to avoid damage to the device and ensure reliable operation.

How should I handle this MOSFET during installation?

Use electrostatic discharge (ESD) precautions and ensure secure connections to prevent failures or intermittent operation once installed in a circuit.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	10 A
	Maximum Drain Source Voltage	100 V
	Package Type	TO-220AB
	Series	LogicFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	180 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	48 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Typical Gate Charge @ Vgs	20 nC @ 5 V
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Minimum Operating Temperature	-55 °C
	Height	8.77mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 10 A
	Maximum Drain Source Voltage 100 V
	Package Type TO-220AB
	Series LogicFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 180 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 48 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Typical Gate Charge @ Vgs 20 nC @ 5 V
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Minimum Operating Temperature -55 °C
	Height 8.77mm