ROHM RD3P100SN N-Channel MOSFET, 10 A, 100 V, 3-Pin DPAK RD3P100SNTL1
- RS Stock No.:
- 172-0448
- Mfr. Part No.:
- RD3P100SNTL1
- Brand:
- ROHM
Bulk discount available
Subtotal (1 pack of 25 units)*
$45.325
(exc. GST)
$49.85
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 225 | $1.813 | $45.33 |
| 250 - 475 | $1.759 | $43.98 |
| 500 - 975 | $1.706 | $42.65 |
| 1000 - 1975 | $1.655 | $41.38 |
| 2000 + | $1.605 | $40.13 |
*price indicative
- RS Stock No.:
- 172-0448
- Mfr. Part No.:
- RD3P100SNTL1
- Brand:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | DPAK (TO-252) | |
| Series | RD3P100SN | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 147 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 20 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Number of Elements per Chip | 1 | |
| Width | 6.4mm | |
| Typical Gate Charge @ Vgs | 18 nC @ 10 V | |
| Length | 6.8mm | |
| Maximum Operating Temperature | +150 °C | |
| Forward Diode Voltage | 1.5V | |
| Height | 2.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type DPAK (TO-252) | ||
Series RD3P100SN | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 147 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 20 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 1 | ||
Width 6.4mm | ||
Typical Gate Charge @ Vgs 18 nC @ 10 V | ||
Length 6.8mm | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.5V | ||
Height 2.3mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- JP
RD3P100SN is a Power MOSFET with Low on-resistance, suitable for Switching.
Low on - resistance
4V drive
High power package
4V drive
High power package
Related links
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