Infineon OptiMOS™ 3 N-Channel MOSFET, 49 A, 40 V, 8-Pin TDSON BSC093N04LSGATMA1

RS Stock No.:: 911-4858
Mfr. Part No.:: BSC093N04LSGATMA1
Brand:: Infineon

Infineon OptiMOS™ 3 N-Channel MOSFET, 49 A, 40 V, 8-Pin TDSON BSC093N04LSGATMA1

Bulk discount available

Subtotal (1 reel of 5000 units)**

$2,900.00

(exc. GST)

$3,200.00

(inc. GST)

25000 In Global stock for delivery within 10 working day(s)*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over $60.00 ex GST

Real time qty checker

Units	Per unit	Per Reel**
5000 - 20000	$0.58	$2,900.00
25000 +	$0.522	$2,610.00

**price indicative

RS Stock No.:: 911-4858
Mfr. Part No.:: BSC093N04LSGATMA1
Brand:: Infineon

Infineon OptiMOS™3 Power MOSFETs, up to 40V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

Infineon OptiMOS™ 3 Series MOSFET, 49A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - BSC093N04LSGATMA1

This MOSFET is designed for efficient power management and control, playing a significant role in automation and electrical applications that require high performance. Its integration enhances circuit efficiency, contributing to overall system reliability and responsiveness in various environments.

Features & Benefits

• Provides a maximum continuous drain current of 49A
• Operates effectively in a voltage range of 40V
• Low drain-source resistance improves performance
• Supports surface mount design for easier integration
• High thermal stability with a maximum temperature rating of +150°C
• Suitable for diverse applications due to a wide gate threshold voltage range

Applications

• Ideal for power in automation and robotics
• Utilised in electric vehicle charging systems
• Suitable for power supply and conversion tasks
• Applied in motor control circuits and drives
• Used in telecommunications for efficient signal management

What type of load can this device handle effectively?

It can manage loads up to 49A, making it appropriate for high-current applications across various industries.

Is it compatible with surface mount technology?

Yes, it features a surface mount design, facilitating straightforward installation on PCBs.

What are the gate voltage limitations for this component?

The device has gate-source voltage limits of -20V to +20V, allowing flexibility in circuit designs.

Can it operate in extreme temperature conditions?

Yes, it effectively operates within a temperature range from -55°C to +150°C, ensuring functionality in harsh environments.

How does the low Rds(on) benefit power applications?

The low drain-source resistance reduces energy losses, enhancing efficiency in power management circuits.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	49 A
Maximum Drain Source Voltage	40 V
Series	OptiMOS™ 3
Package Type	TDSON
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	13.7 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	2.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	6.35mm
Width	5.35mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	8.6 nC @ 4.5 V
Forward Diode Voltage	1.2V
Height	1.1mm
Minimum Operating Temperature	-55 °C