N-Channel MOSFET, 49 A, 40 V, 8-Pin TDSON Infineon BSC093N04LSGATMA1

RS Stock No.:: 752-8164
Mfr. Part No.:: BSC093N04LSGATMA1
Brand:: Infineon

N-Channel MOSFET, 49 A, 40 V, 8-Pin TDSON Infineon BSC093N04LSGATMA1

Bulk discount available

Subtotal (1 pack of 5 units)**

$5.99

(exc. GST)

$6.59

(inc. GST)

16510 In Global stock for delivery within 10 working day(s)*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over $80.00 ex GST

Units	Per unit	Per Pack**
5 - 1245	$1.198	$5.99
1250 - 2495	$1.176	$5.88
2500 +	$1.156	$5.78

**price indicative

RS Stock No.:: 752-8164
Mfr. Part No.:: BSC093N04LSGATMA1
Brand:: Infineon

Infineon OptiMOS™ 3 Series MOSFET, 49A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - BSC093N04LSGATMA1

This MOSFET is designed for efficient power management and control, playing a significant role in automation and electrical applications that require high performance. Its integration enhances circuit efficiency, contributing to overall system reliability and responsiveness in various environments.

Features & Benefits

• Provides a maximum continuous drain current of 49A
• Operates effectively in a voltage range of 40V
• Low drain-source resistance improves performance
• Supports surface mount design for easier integration
• High thermal stability with a maximum temperature rating of +150°C
• Suitable for diverse applications due to a wide gate threshold voltage range

Applications

• Ideal for power in automation and robotics
• Utilised in electric vehicle charging systems
• Suitable for power supply and conversion tasks
• Applied in motor control circuits and drives
• Used in telecommunications for efficient signal management

What type of load can this device handle effectively?

It can manage loads up to 49A, making it appropriate for high-current applications across various industries.

Is it compatible with surface mount technology?

Yes, it features a surface mount design, facilitating straightforward installation on PCBs.

What are the gate voltage limitations for this component?

The device has gate-source voltage limits of -20V to +20V, allowing flexibility in circuit designs.

Can it operate in extreme temperature conditions?

Yes, it effectively operates within a temperature range from -55°C to +150°C, ensuring functionality in harsh environments.

How does the low Rds(on) benefit power applications?

The low drain-source resistance reduces energy losses, enhancing efficiency in power management circuits.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	49 A
Maximum Drain Source Voltage	40 V
Package Type	TDSON
Series	OptiMOS™ 3
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	13.7 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	2.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Length	6.35mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	8.6 nC @ 4.5 V
Width	5.35mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.1mm