Infineon OptiMOS 3 Type N-Channel MOSFET, 300 A, 100 V Enhancement, 8-Pin HSOF IPT020N10N3ATMA1

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$24.52

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$26.98

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2 - 498$12.26$24.52
500 - 998$12.185$24.37
1000 +$12.04$24.08

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Packaging Options:
RS Stock No.:
906-4356
Mfr. Part No.:
IPT020N10N3ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

300A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS 3

Package Type

HSOF

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

375W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

156nC

Maximum Operating Temperature

175°C

Height

2.4mm

Width

10.1 mm

Length

10.58mm

Standards/Approvals

No

Automotive Standard

No

RoHS Status: Exempt

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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