P-Channel MOSFET, 2.9 A, 60 V, 3-Pin SOT-223 Infineon BSP613PH6327XTSA1

RS Stock No.:: 892-2236
Mfr. Part No.:: BSP613PH6327XTSA1
Brand:: Infineon

P-Channel MOSFET, 2.9 A, 60 V, 3-Pin SOT-223 Infineon BSP613PH6327XTSA1

Available for back order.

Price (ex. GST) Each (In a Pack of 20)

$1.688

(exc. GST)

$1.857

(inc. GST)

Units	Per unit	Per Pack*
20 - 240	$1.688	$33.76
260 - 480	$1.679	$33.58
500 +	$1.648	$32.96

*price indicative

RS Stock No.:: 892-2236
Mfr. Part No.:: BSP613PH6327XTSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS^® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

The Infineon BSP613P OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

P-Channel
Enhancement mode
Avalanche rated
Logic Level

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	2.9 A
Maximum Drain Source Voltage	60 V
Package Type	SOT-223
Series	SIPMOS®
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	130 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	10.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	22 nC @ 10 V
Maximum Operating Temperature	+175 °C
Width	40mm
Transistor Material	Si
Number of Elements per Chip	1
Length	40mm
Minimum Operating Temperature	-55 °C
Height	1.5mm
Forward Diode Voltage	1.1V