N-Channel MOSFET, 32 A, 650 V, 3-Pin TO-247 STMicroelectronics STW40N65M2
- RS Stock No.:
- 168-8844
- Mfr. Part No.:
- STW40N65M2
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 30 units)**
$263.52
(exc. GST)
$289.86
(inc. GST)
480 In Global stock for delivery within 10 working day(s)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over $80.00 ex GST
Units | Per unit | Per Tube** |
---|---|---|
30 - 30 | $8.784 | $263.52 |
60 - 90 | $8.565 | $256.95 |
120 + | $8.433 | $252.99 |
**price indicative
- RS Stock No.:
- 168-8844
- Mfr. Part No.:
- STW40N65M2
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 32 A | |
Maximum Drain Source Voltage | 650 V | |
Package Type | TO-247 | |
Series | MDmesh M2 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 99 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 250 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Length | 15.75mm | |
Typical Gate Charge @ Vgs | 56.5 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Width | 5.15mm | |
Height | 20.15mm | |
Forward Diode Voltage | 1.6V | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 32 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247 | ||
Series MDmesh M2 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 99 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 250 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 15.75mm | ||
Typical Gate Charge @ Vgs 56.5 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 5.15mm | ||
Height 20.15mm | ||
Forward Diode Voltage 1.6V | ||
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