N-Channel MOSFET, 80 A, 55 V, 3-Pin I2PAK Infineon IPI80N06S208AKSA1

RS Stock No.:: 857-6779
Mfr. Part No.:: IPI80N06S208AKSA1
Brand:: Infineon

N-Channel MOSFET, 80 A, 55 V, 3-Pin I2PAK Infineon IPI80N06S208AKSA1

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Price (ex. GST) Each (In a Tube of 500)

$1.702

(exc. GST)

$1.872

(inc. GST)

Units	Per unit	Per Tube*
500 - 500	$1.702	$851.00
1000 - 2000	$1.694	$847.00
2500 +	$1.682	$841.00

*price indicative

RS Stock No.:: 857-6779
Mfr. Part No.:: IPI80N06S208AKSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

RoHS Status: Exempt

Product Details

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	80 A
Maximum Drain Source Voltage	55 V
Series	OptiMOS™
Package Type	I2PAK (TO-262)
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	6.6 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	250 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	4.4mm
Typical Gate Charge @ Vgs	86 nC @ 10 V
Length	10mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	9.25mm