N-Channel MOSFET, 195 A, 60 V, 3-Pin D2PAK Infineon IRFS7534TRLPBF
- RS Stock No.:
- 820-8873
- Mfr. Part No.:
- IRFS7534TRLPBF
- Brand:
- Infineon
On back order for despatch 06/05/2025, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (In a Pack of 2)
$4.56
(exc. GST)
$5.02
(inc. GST)
| Units | Per unit | Per Pack* |
| 2 - 198 | $4.56 | $9.12 |
| 200 - 398 | $4.45 | $8.90 |
| 400 + | $4.385 | $8.77 |
| *price indicative | ||
Alternative
This product is not currently available. Here is our alternative recommendation.
- RS Stock No.:
- 820-8873
- Mfr. Part No.:
- IRFS7534TRLPBF
- Brand:
- Infineon
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 195 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | D2PAK (TO-263) |
| Series | StrongIRFET |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2.4 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.7V |
| Minimum Gate Threshold Voltage | 2.1V |
| Maximum Power Dissipation | 294 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 186 nC @ 10 V |
| Length | 10.67mm |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Width | 9.65mm |
| Height | 4.83mm |
| Minimum Operating Temperature | -55 °C |