P-Channel MOSFET, 17 A, 40 V, 8-Pin SOIC Vishay SQ4401EY-T1_GE3
- RS Stock No.:
- 819-3917
- Mfr. Part No.:
- SQ4401EY-T1_GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)**
$35.02
(exc. GST)
$38.52
(inc. GST)
20 In Global stock for delivery within 10 working day(s)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over $80.00 ex GST
Units | Per unit | Per Pack** |
---|---|---|
10 - 10 | $3.502 | $35.02 |
20 - 90 | $3.395 | $33.95 |
100 + | $3.293 | $32.93 |
**price indicative
- RS Stock No.:
- 819-3917
- Mfr. Part No.:
- SQ4401EY-T1_GE3
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | P | |
Maximum Continuous Drain Current | 17 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | SOIC | |
Series | SQ Rugged | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 24 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1.5V | |
Maximum Power Dissipation | 7.14 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Length | 5mm | |
Typical Gate Charge @ Vgs | 74 nC @ 10 V | |
Transistor Material | Si | |
Width | 4mm | |
Height | 1.55mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 17 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type SOIC | ||
Series SQ Rugged | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 24 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 7.14 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 74 nC @ 10 V | ||
Transistor Material Si | ||
Width 4mm | ||
Height 1.55mm | ||
Minimum Operating Temperature -55 °C | ||
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