Vishay Si2366DS Type N-Channel MOSFET, 5.8 A, 30 V Enhancement, 3-Pin SOT-23 SI2366DS-T1-GE3
- RS Stock No.:
- 812-3132
- Mfr. Part No.:
- SI2366DS-T1-GE3
- Brand:
- Vishay
This image is representative of the product range
Subtotal (1 pack of 20 units)*
$11.12
(exc. GST)
$12.24
(inc. GST)
FREE delivery for orders over $80.00 ex GST
- 40 unit(s) ready to ship
- Plus 340 unit(s) ready to ship from another location
- Plus 2,420 unit(s) shipping from 30 June 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 740 | $0.556 | $11.12 |
| 760 - 1480 | $0.548 | $10.96 |
| 1500 + | $0.539 | $10.78 |
*price indicative
- RS Stock No.:
- 812-3132
- Mfr. Part No.:
- SI2366DS-T1-GE3
- Brand:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | Si2366DS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.1W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 6.4nC | |
| Forward Voltage Vf | 0.85V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 1.4mm | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series Si2366DS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.1W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 6.4nC | ||
Forward Voltage Vf 0.85V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 1.4mm | ||
Length 3.04mm | ||
Height 1.02mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay Si2366DS Series MOSFET, 30V Maximum Drain Source Voltage, 5.8A Maximum Continuous Drain Current - SI2366DS-T1-GE3
Features and Benefits:
• 5.8A continuous drain current supports moderate load currents
• 30V drain-source rating enables low-voltage power rails
• 6.4nC typical gate charge permits fast gate transitions
• 2.1W power dissipation allows for sustained thermal loading
• 150°C maximum operating temperature endures elevated environments
Applications
• Ideal for load switching in control and Interface modules
• Used for motor driver stages in small electromechanical systems
• Can be used for battery protection and power-path management
• Used with Compact consumer power supplies requiring surface-mount parts
What mounting style does it require for PCB assembly?
What gate voltage endurance should designers expect?
How wide an ambient temperature range can it operate in?
What mechanical package size considerations are there for layout?
Are there environmental or regulatory characteristics to note?
Related links
- Vishay Si2366DS Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- Vishay Si2318CDS Type N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type N-Channel Power MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay Si2308BDS Type N-Channel Power MOSFET 60 V Enhancement, 3-Pin SOT-23
- Vishay Si2374DS Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay Si2338DS Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay Si2304DDS Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
