Dual N-Channel MOSFET, 3 A, 20 V, 6-Pin SOT-23 onsemi FDC6401N
- RS Stock No.:
- 809-0852
- Mfr. Part No.:
- FDC6401N
- Brand:
- onsemi
Bulk discount available
Subtotal (1 tape of 20 units)**
$18.56
(exc. GST)
$20.42
(inc. GST)
7280 In Global stock for delivery within 10 working day(s)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over $80.00 ex GST
Units | Per unit | Per Tape** |
---|---|---|
20 - 740 | $0.928 | $18.56 |
760 - 1480 | $0.905 | $18.10 |
1500 + | $0.892 | $17.84 |
**price indicative
- RS Stock No.:
- 809-0852
- Mfr. Part No.:
- FDC6401N
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 3 A | |
Maximum Drain Source Voltage | 20 V | |
Package Type | SOT-23 | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 106 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 0.5V | |
Maximum Power Dissipation | 960 mW | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -12 V, +12 V | |
Number of Elements per Chip | 2 | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 3.3 nC @ 4.5 V | |
Length | 3mm | |
Width | 1.7mm | |
Transistor Material | Si | |
Height | 1mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 3 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 106 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.5V | ||
Maximum Power Dissipation 960 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 3.3 nC @ 4.5 V | ||
Length 3mm | ||
Width 1.7mm | ||
Transistor Material Si | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
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