Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin SOT-23 onsemi FDC6561AN
- RS Stock No.:
- 761-9838
- Mfr. Part No.:
- FDC6561AN
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)**
$8.03
(exc. GST)
$8.83
(inc. GST)
28910 In Global stock for delivery within 10 working day(s)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over $80.00 ex GST
Units | Per unit | Per Pack** |
|---|---|---|
| 10 - 740 | $0.803 | $8.03 |
| 750 - 1490 | $0.782 | $7.82 |
| 1500 + | $0.769 | $7.69 |
**price indicative
- RS Stock No.:
- 761-9838
- Mfr. Part No.:
- FDC6561AN
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.5 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | PowerTrench | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 152 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 960 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 2 | |
| Typical Gate Charge @ Vgs | 2.3 nC @ 5 V | |
| Width | 1.7mm | |
| Length | 3mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.5 A | ||
Maximum Drain Source Voltage 30 V | ||
Series PowerTrench | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 152 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 960 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 2.3 nC @ 5 V | ||
Width 1.7mm | ||
Length 3mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
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