onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 4.5 A, 100 V Enhancement, 8-Pin SOIC FDS3992
- RS Stock No.:
- 806-3649
- Mfr. Part No.:
- FDS3992
- Brand:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
$14.06
(exc. GST)
$15.465
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Temporarily out of stock
- 1,735 unit(s) shipping from 05 January 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 620 | $2.812 | $14.06 |
| 625 - 1245 | $2.74 | $13.70 |
| 1250 + | $2.698 | $13.49 |
*price indicative
- RS Stock No.:
- 806-3649
- Mfr. Part No.:
- FDS3992
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | PowerTrench | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 123mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Length | 4.9mm | |
| Width | 3.9 mm | |
| Height | 1.575mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 123mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Length 4.9mm | ||
Width 3.9 mm | ||
Height 1.575mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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