Dual N-Channel MOSFET, 3.5 A, 100 V, 8-Pin SOIC onsemi FDS89141

RS Stock No.:: 166-2652
Mfr. Part No.:: FDS89141
Brand:: onsemi

Dual N-Channel MOSFET, 3.5 A, 100 V, 8-Pin SOIC onsemi FDS89141

This image is representative of the product range

2434 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (On a Reel of 2500)

$2.134

(exc. GST)

$2.347

(inc. GST)

Units	Per unit	Per Reel*
2500 - 2500	$2.134	$5,335.00
5000 - 7500	$2.081	$5,202.50
10000 +	$2.049	$5,122.50

*price indicative

RS Stock No.:: 166-2652
Mfr. Part No.:: FDS89141
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	3.5 A
Maximum Drain Source Voltage	100 V
Series	PowerTrench
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	107 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	31 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Length	4mm
Width	5mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	5.1 nC @ 10 V
Height	1.5mm
Minimum Operating Temperature	-55 °C