IXYS HiperFET, Polar3 N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-3PN IXFQ28N60P3

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RS Stock No.:
802-4451
Mfr. Part No.:
IXFQ28N60P3
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

600 V

Series

HiperFET, Polar3

Package Type

TO-3P

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

260 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

695 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Width

4.9mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.8mm

Typical Gate Charge @ Vgs

50 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

20.3mm

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series


A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

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