Toshiba N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1

RS Stock No.:: 796-5070
Mfr. Part No.:: TK100E10N1
Brand:: Toshiba

Toshiba N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1

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RS Stock No.:: 796-5070
Mfr. Part No.:: TK100E10N1
Brand:: Toshiba

TK100E10N1, Silicon N-channel MOSFET (U-MOSVIII-H) Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	207 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220
Series	TK
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	3.4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Maximum Power Dissipation	255 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	4.45mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	140 nC @ 10 V
Length	10.16mm
Number of Elements per Chip	1
Transistor Material	Si
Height	15.1mm

Toshiba N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1

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