Vishay Si7456DDP Type N-Channel MOSFET, 27.8 A, 100 V Enhancement, 8-Pin PowerPAK SO-8 SI7456DDP-T1-GE3
- RS Stock No.:
- 787-9244
- Mfr. Part No.:
- SI7456DDP-T1-GE3
- Brand:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
$10.19
(exc. GST)
$11.21
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Last RS stock
- Final 14,910 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 745 | $2.038 | $10.19 |
| 750 - 1495 | $1.99 | $9.95 |
| 1500 + | $1.96 | $9.80 |
*price indicative
- RS Stock No.:
- 787-9244
- Mfr. Part No.:
- SI7456DDP-T1-GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 27.8A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK SO-8 | |
| Series | Si7456DDP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.031Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 35.7W | |
| Typical Gate Charge Qg @ Vgs | 9.7nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Lead (Pb)-Free | |
| Width | 5.26 mm | |
| Height | 1.12mm | |
| Length | 6.25mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 27.8A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK SO-8 | ||
Series Si7456DDP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.031Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 35.7W | ||
Typical Gate Charge Qg @ Vgs 9.7nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Lead (Pb)-Free | ||
Width 5.26 mm | ||
Height 1.12mm | ||
Length 6.25mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay Si7456DDP Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK SO-8
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212
- Vishay SiSHA10DN Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212
- Vishay ThunderFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212
- Vishay Dual N Channel Mosfet TrenchFET 2 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212
- Vishay SiSS76LDN Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAK 1212