N-Channel MOSFET, 10.6 A, 650 V, 3-Pin DPAK Infineon IPD60R380C6ATMA1

RS Stock No.:: 753-3011
Mfr. Part No.:: IPD60R380C6ATMA1
Brand:: Infineon

N-Channel MOSFET, 10.6 A, 650 V, 3-Pin DPAK Infineon IPD60R380C6ATMA1

132 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Pack of 2)

$2.455

(exc. GST)

$2.701

(inc. GST)

Units	Per unit	Per Pack*
2 - 624	$2.455	$4.91
626 - 1248	$2.40	$4.80
1250 +	$2.355	$4.71

*price indicative

RS Stock No.:: 753-3011
Mfr. Part No.:: IPD60R380C6ATMA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Infineon CoolMOS™C6/C7 Power MOSFET

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	10.6 A
Maximum Drain Source Voltage	650 V
Series	CoolMOS™ C6
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	380 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	83 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Typical Gate Charge @ Vgs	32 nC @ 10 V
Width	6.22mm
Length	6.73mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Height	2.41mm
Minimum Operating Temperature	-55 °C