N-Channel MOSFET, 38 A, 650 V, 3-Pin TO-220 Infineon IPP60R099C6XKSA1

RS Stock No.:: 145-9727
Mfr. Part No.:: IPP60R099C6XKSA1
Brand:: Infineon

N-Channel MOSFET, 38 A, 650 V, 3-Pin TO-220 Infineon IPP60R099C6XKSA1

This image is representative of the product range

8 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Tube of 50)

$7.876

(exc. GST)

$8.664

(inc. GST)

Units	Per unit	Per Tube*
50 - 200	$7.876	$393.80
250 +	$7.089	$354.45

*price indicative

RS Stock No.:: 145-9727
Mfr. Part No.:: IPP60R099C6XKSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Infineon CoolMOS™C6/C7 Power MOSFET

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	38 A
Maximum Drain Source Voltage	650 V
Package Type	TO-220
Series	CoolMOS™ C6
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	99 mΩ
Channel Mode	Enhancement
Maximum Power Dissipation	35 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Length	10.65mm
Typical Gate Charge @ Vgs	119 nC @ 10 V
Number of Elements per Chip	1
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Width	4.9mm
Height	16.15mm
Forward Diode Voltage	0.9V
Minimum Operating Temperature	-55 °C