Taiwan Semiconductor Type P-Channel MOSFET, 3 A, 30 V Enhancement, 3-Pin SOT-23 TSM2307CX RFG
- RS Stock No.:
- 743-6030
- Distrelec Article No.:
- 304-45-913
- Mfr. Part No.:
- TSM2307CX RFG
- Brand:
- Taiwan Semiconductor
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
$28.675
(exc. GST)
$31.55
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Supply shortage
- 50 left, ready to ship from another location
- Plus 22,275 left, shipping from 05 March 2026
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 725 | $1.147 | $28.68 |
| 750 - 1475 | $1.118 | $27.95 |
| 1500 + | $1.103 | $27.58 |
*price indicative
- RS Stock No.:
- 743-6030
- Distrelec Article No.:
- 304-45-913
- Mfr. Part No.:
- TSM2307CX RFG
- Brand:
- Taiwan Semiconductor
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 1.25W | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.7 mm | |
| Height | 1.2mm | |
| Length | 3.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 1.25W | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Operating Temperature 150°C | ||
Width 1.7 mm | ||
Height 1.2mm | ||
Length 3.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
P-Channel Power MOSFET, Taiwan Semiconductor
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