Dual N/P-Channel-Channel MOSFET, 7.3 A, 8.6 A, 30 V, 8-Pin SOIC onsemi FDS8858CZ
- RS Stock No.:
- 671-0719
- Mfr. Part No.:
- FDS8858CZ
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)**
$6.94
(exc. GST)
$7.64
(inc. GST)
35 In Global stock for delivery within 10 working day(s)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over $80.00 ex GST
Units | Per unit | Per Pack** |
---|---|---|
5 - 620 | $1.388 | $6.94 |
625 - 1245 | $1.364 | $6.82 |
1250 + | $1.342 | $6.71 |
**price indicative
- RS Stock No.:
- 671-0719
- Mfr. Part No.:
- FDS8858CZ
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N, P | |
Maximum Continuous Drain Current | 7.3 A, 8.6 A | |
Maximum Drain Source Voltage | 30 V | |
Series | PowerTrench | |
Package Type | SOIC | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 17 mΩ, 21 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 1.6 W | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -25 V, -20 V, +20 V, +25 V | |
Typical Gate Charge @ Vgs | 17 nC @ 10 V, 33 nC @ 10 V | |
Number of Elements per Chip | 2 | |
Maximum Operating Temperature | +150 °C | |
Length | 5mm | |
Transistor Material | Si | |
Width | 4mm | |
Minimum Operating Temperature | -55 °C | |
Height | 1.5mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 7.3 A, 8.6 A | ||
Maximum Drain Source Voltage 30 V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 17 mΩ, 21 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.6 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -25 V, -20 V, +20 V, +25 V | ||
Typical Gate Charge @ Vgs 17 nC @ 10 V, 33 nC @ 10 V | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Length 5mm | ||
Transistor Material Si | ||
Width 4mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
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