N-Channel MOSFET, 13 A, 30 V, 8-Pin SOIC Infineon IRF7413PBF

RS Stock No.:: 543-2468
Mfr. Part No.:: IRF7413PBF
Brand:: Infineon

N-Channel MOSFET, 13 A, 30 V, 8-Pin SOIC Infineon IRF7413PBF

70 In stock for delivery within 1 working day(s)

Price (ex. GST) Each

Was $1.90

You pay

$1.52

(exc. GST)

$1.67

(inc. GST)

Units	Per unit
1 +	$1.52

RS Stock No.:: 543-2468
Mfr. Part No.:: IRF7413PBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	13 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	11 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	52 nC @ 10 V
Maximum Operating Temperature	+150 °C
Length	5mm
Width	4mm
Transistor Material	Si
Number of Elements per Chip	1
Height	1.5mm
Minimum Operating Temperature	-55 °C