Infineon HEXFET N-Channel MOSFET, 7.3 A, 30 V, 8-Pin SOIC IRF7201TRPBF

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Packaging Options:
RS Stock No.:
826-8838
Mfr. Part No.:
IRF7201TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

7.3 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

50 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Width

4mm

Minimum Operating Temperature

-55 °C

Height

1.5mm

Forward Diode Voltage

1.2V

COO (Country of Origin):
CN

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 7.3A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - IRF7201TRPBF


This N-channel MOSFET is engineered for efficient switching in various applications. Featuring advanced HEXFET technology, it provides superior performance with low on-resistance and high power dissipation capabilities. With a continuous drain current of 7.3A and a drain-source voltage of 30V, this component is suitable for automation, electronics, and other technical environments where efficiency and reliability are essential.

Features & Benefits


• Low RDS(on) enhances energy efficiency
• Maximum power dissipation of 2.5W
• Gate threshold voltage of only 1V
• Designed for surface mount applications to optimise space
• Fast switching speed improves system responsiveness

Applications


• Utilised in power management systems
• Suitable for motor control
• Commonly used in automotive switching elements
• Employed in power supply circuits
• Applicable in telecommunications equipment

How does the low RDS(on) benefit circuit efficiency?


The low RDS(on) reduces power losses through the device, boosting overall circuit efficiency and minimising heat generation.

What temperatures can this MOSFET operate within?


It operates effectively within a range of -55°C to +150°C, making it versatile for various environmental conditions.

What is the significance of the gate threshold voltage?


A low gate threshold voltage facilitates easier control of the MOSFET, enabling it to switch on with lower input signals and enhancing compatibility with diverse circuits.

Can this MOSFET handle pulsed currents?


Yes, it can manage pulsed drain currents up to 58A, suitable for applications requiring short bursts of power.

What manufacturing processes ensure its reliability?


Advanced processing techniques are implemented to achieve low on-resistance and robust device design, ensuring dependable performance in challenging applications.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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