Name: Infineon HEXFET N-Channel MOSFET, 7.3 A, 30 V, 8-Pin SOIC IRF7201TRPBF
Brand: Infineon
SKU: 826-8838
Price: 1.11 AUD
Availability: OutOfStock

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	7.3 A
	Maximum Drain Source Voltage	30 V
	Series	HEXFET
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	50 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Length	5mm
	Transistor Material	Si
	Width	4mm
	Typical Gate Charge @ Vgs	19 nC @ 10 V
	Maximum Operating Temperature	+150 °C
	Height	1.5mm
	Forward Diode Voltage	1.2V
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 7.3 A
	Maximum Drain Source Voltage 30 V
	Series HEXFET
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 50 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Length 5mm
	Transistor Material Si
	Width 4mm
	Typical Gate Charge @ Vgs 19 nC @ 10 V
	Maximum Operating Temperature +150 °C
	Height 1.5mm
	Forward Diode Voltage 1.2V
	Minimum Operating Temperature -55 °C

COO (Country of Origin):: CN

Infineon HEXFET Series MOSFET, 7.3A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - IRF7201TRPBF

This N-channel MOSFET is engineered for efficient switching in various applications. Featuring advanced HEXFET technology, it provides superior performance with low on-resistance and high power dissipation capabilities. With a continuous drain current of 7.3A and a drain-source voltage of 30V, this component is suitable for automation, electronics, and other technical environments where efficiency and reliability are essential.

Features & Benefits

• Low RDS(on) enhances energy efficiency
• Maximum power dissipation of 2.5W
• Gate threshold voltage of only 1V
• Designed for surface mount applications to optimise space
• Fast switching speed improves system responsiveness

Applications

• Utilised in power management systems
• Suitable for motor control
• Commonly used in automotive switching elements
• Employed in power supply circuits
• Applicable in telecommunications equipment

How does the low RDS(on) benefit circuit efficiency?

The low RDS(on) reduces power losses through the device, boosting overall circuit efficiency and minimising heat generation.

What temperatures can this MOSFET operate within?

It operates effectively within a range of -55°C to +150°C, making it versatile for various environmental conditions.

What is the significance of the gate threshold voltage?

A low gate threshold voltage facilitates easier control of the MOSFET, enabling it to switch on with lower input signals and enhancing compatibility with diverse circuits.

Can this MOSFET handle pulsed currents?

Yes, it can manage pulsed drain currents up to 58A, suitable for applications requiring short bursts of power.

What manufacturing processes ensure its reliability?

Advanced processing techniques are implemented to achieve low on-resistance and robust device design, ensuring dependable performance in challenging applications.

Infineon HEXFET N-Channel MOSFET, 7.3 A, 30 V, 8-Pin SOIC IRF7201TRPBF