Infineon HEXFET N-Channel MOSFET, 6.5 A, 30 V, 3-Pin SOT-223 IRLL3303PBF
- RS Stock No.:
- 540-9890
- Mfr. Part No.:
- IRLL3303PBF
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
$0.74
(exc. GST)
$0.81
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Last RS stock
- 74 left, ready to ship
- Plus 1 left, ready to ship from another location
Units | Per unit |
|---|---|
| 1 - 9 | $0.74 |
| 10 - 49 | $0.72 |
| 50 - 99 | $0.71 |
| 100 - 249 | $0.69 |
| 250 + | $0.67 |
*price indicative
- RS Stock No.:
- 540-9890
- Mfr. Part No.:
- IRLL3303PBF
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6.5 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-223 | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 31 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Typical Gate Charge @ Vgs | 34 nC @ 10 V | |
| Length | 6.7mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Width | 3.7mm | |
| Height | 1.7mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 6.5 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-223 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 31 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Typical Gate Charge @ Vgs 34 nC @ 10 V | ||
Length 6.7mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Width 3.7mm | ||
Height 1.7mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- STMicroelectronics STripFET N-Channel MOSFET 30 V, 3-Pin SOT-223 STN4NF03L
- Infineon N-Channel MOSFET 700 V, 3-Pin SOT-223 IPN70R750P7SATMA1
- Infineon HEXFET N-Channel MOSFET 30 V SO-8 IRF7313TRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin SOT-223 IRLL2705TRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin SOT-223 IRFL4105TRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin SOT-223 IRLL024NTRPBF
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin SOT-223 IRFL4315TRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin SOT-223 IRLL014NTRPBF