Infineon HEXFET N-Channel MOSFET, 2.8 A, 55 V, 3-Pin SOT-223 IRLL014NPBF

RS Stock No.:: 302-000
Mfr. Part No.:: IRLL014NPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 2.8 A, 55 V, 3-Pin SOT-223 IRLL014NPBF

Subtotal (1 pack of 5 units)*

$2.55

(exc. GST)

$2.80

(inc. GST)

FREE delivery for orders over $60.00 ex GST

Last RS stock

Final 80 unit(s), ready to ship

Units	Per unit	Per Pack*
5 +	$0.51	$2.55

*price indicative

RS Stock No.:: 302-000
Mfr. Part No.:: IRLL014NPBF
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	2.8 A
	Maximum Drain Source Voltage	55 V
	Series	HEXFET
	Package Type	SOT-223
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	140 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2.1 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Width	3.7mm
	Typical Gate Charge @ Vgs	9.5 nC @ 10 V
	Length	6.7mm
	Transistor Material	Si
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Minimum Operating Temperature	-55 °C
	Height	1.7mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 2.8 A
	Maximum Drain Source Voltage 55 V
	Series HEXFET
	Package Type SOT-223
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 140 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2.1 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Width 3.7mm
	Typical Gate Charge @ Vgs 9.5 nC @ 10 V
	Length 6.7mm
	Transistor Material Si
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Minimum Operating Temperature -55 °C
	Height 1.7mm

Infineon HEXFET Series MOSFET, 2.8A Maximum Continuous Drain Current, 2.1W Maximum Power Dissipation - IRLL014NTRPBF

This MOSFET from Infineon, part of the HEXFET family, is engineered for high performance in various electrical and electronic applications. As an N-channel device operating in enhancement mode, it plays a VITAL role in power management for devices that demand high reliability in challenging conditions. Advanced technologies are integrated to manage substantial electrical loads effectively while keeping a Compact design.

Features & Benefits

• Maximum continuous drain current of 2.8A for dependable performance

• Wide voltage range up to 55V for diverse applications

• Low drain-source on-resistance of 280mΩ minimises power losses

• High thermal stability with a maximum operating temperature of +150°C

• Enhanced gate threshold voltage options to improve switching capabilities

• Designed for surface mount applications, aiding PCB integration

Applications

• Utilised in automation systems for effective motor control

• Employed in power supply circuits for efficient voltage regulation

• Suitable for switching in electronic devices

• Integrated into battery management systems for optimised energy use

• Applicable in LED drivers to enhance control efficiency

What is the recommended mounting technique for optimal performance?

Utilising surface mount techniques ensures improved thermal performance and space efficiency on printed circuit boards.

How should the maximum gate-source voltage be considered when designing circuits?

It is important to maintain the gate-source voltage within the specified limits of -16V to +16V to ensure device integrity and performance.

Can this component handle high temperatures in operational environments?

It is rated for operation in environments up to +150°C, making it suitable for high-temperature applications.

Is it compatible with low-voltage battery systems?

Yes, it can manage low-voltage applications while providing effective power control and switching efficiency.