N-Channel MOSFET, 2.8 A, 55 V, 3-Pin SOT-223 Infineon IRLL014NPBF

RS Stock No.:: 302-000
Mfr. Part No.:: IRLL014NPBF
Brand:: Infineon

N-Channel MOSFET, 2.8 A, 55 V, 3-Pin SOT-223 Infineon IRLL014NPBF

90 In stock for delivery within 1 working day(s)

Price (ex. GST) Each (In a Pack of 5)

$1.018

(exc. GST)

$1.12

(inc. GST)

Units	Per unit	Per Pack*
5 +	$1.018	$5.09

*price indicative

RS Stock No.:: 302-000
Mfr. Part No.:: IRLL014NPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	2.8 A
Maximum Drain Source Voltage	55 V
Series	HEXFET
Package Type	SOT-223
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	140 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.1 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Typical Gate Charge @ Vgs	9.5 nC @ 10 V
Length	6.7mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Width	3.7mm
Height	1.7mm
Minimum Operating Temperature	-55 °C