N-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220AB onsemi RFP12N10L

RS Stock No.:: 368-3197
Mfr. Part No.:: RFP12N10L
Brand:: onsemi

N-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220AB onsemi RFP12N10L

268 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Tube of 50)

$1.698

(exc. GST)

$1.868

(inc. GST)

Units	Per unit	Per Tube*
50 - 50	$1.698	$84.90
100 - 150	$1.689	$84.45
200 +	$1.673	$83.65

*price indicative

RS Stock No.:: 368-3197
Mfr. Part No.:: RFP12N10L
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	12 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	200 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	60 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-10 V, +10 V
Transistor Material	Si
Length	10.67mm
Width	4.83mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Height	9.4mm
Minimum Operating Temperature	-55 °C