N-Channel MOSFET, 660 mA, 200 V Depletion, 3-Pin SOT-223 Infineon BSP149H6327XTSA1

RS Stock No.:: 354-5720
Mfr. Part No.:: BSP149H6327XTSA1
Brand:: Infineon

N-Channel MOSFET, 660 mA, 200 V Depletion, 3-Pin SOT-223 Infineon BSP149H6327XTSA1

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Price (ex. GST) Each

Was $2.59

You pay

$1.67

(exc. GST)

$1.84

(inc. GST)

Units	Per unit
1 - 249	$1.67
250 - 499	$1.65
500 +	$1.62

RS Stock No.:: 354-5720
Mfr. Part No.:: BSP149H6327XTSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Infineon SIPMOS® N-Channel MOSFETs

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MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	660 mA
Maximum Drain Source Voltage	200 V
Package Type	SOT-223
Series	SIPMOS®
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	1.8 Ω
Channel Mode	Depletion
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	1.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	11 nC @ 5 V
Width	3.5mm
Transistor Material	Si
Length	6.5mm
Minimum Operating Temperature	-55 °C
Height	1.6mm