Vishay SIS Type N-Channel MOSFET, 178.3 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS66DN-T1-GE3

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$20.09

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$22.10

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Per unit
Per Pack*
10 - 90$2.009$20.09
100 - 240$1.577$15.77
250 - 490$1.441$14.41
500 - 990$1.324$13.24
1000 +$1.131$11.31

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Packaging Options:
RS Stock No.:
281-6040
Mfr. Part No.:
SISS66DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

178.3A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212-8S

Series

SIS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00138Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

65.8W

Typical Gate Charge Qg @ Vgs

24.7nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

3.3 mm

Length

3.3mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET with schottky diode has applications in synchronous rectification, synchronous buck converter, and DC/DC conversions.

TrenchFET Generation IV power MOSFET

SKYFET with monolithic schottky diode

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