Vishay SIS Type N-Channel MOSFET, 178.3 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS66DN-T1-GE3

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Subtotal (1 reel of 3000 units)*

$3,402.00

(exc. GST)

$3,741.00

(inc. GST)

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Units
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Per Reel*
3000 - 3000$1.134$3,402.00
6000 +$1.095$3,285.00

*price indicative

RS Stock No.:
281-6039
Distrelec Article No.:
301-56-785
Mfr. Part No.:
SISS66DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

178.3A

Maximum Drain Source Voltage Vds

30V

Series

SIS

Package Type

PowerPAK 1212-8S

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00138Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

65.8W

Typical Gate Charge Qg @ Vgs

24.7nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.3mm

Width

3.3 mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET with schottky diode has applications in synchronous rectification, synchronous buck converter, and DC/DC conversions.

TrenchFET Generation IV power MOSFET

SKYFET with monolithic schottky diode

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